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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications
Zhenhai Li, Tianyu Wang, Jiajie Yu, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 12
Closed Access | Times Cited: 22

Showing 22 citing articles:

Recent development of lead-free relaxor ferroelectric and antiferroelectric thin films as energy storage dielectric capacitors
K.C. Sekhar, B. Anina Anju, Surya Kiran P. Nair, et al.
Journal of the European Ceramic Society (2024) Vol. 44, Iss. 7, pp. 4332-4349
Open Access | Times Cited: 17
Brain-inspired computing systems: a systematic literature review
Mohamadreza Zolfagharinejad, Unai Alegre-Ibarra, Tao Chen, et al.
The European Physical Journal B (2024) Vol. 97, Iss. 6
Open Access | Times Cited: 8
CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing
Zhenhai Li, Jialin Meng, Jiajie Yu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 3, pp. 532-535
Closed Access | Times Cited: 19
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Markus Hellenbrand, Judith L. MacManus‐Driscoll
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 18
The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices
Zhenhai Li, Jinchen Wei, Jialin Meng, et al.
Nano Letters (2023) Vol. 23, Iss. 10, pp. 4675-4682
Closed Access | Times Cited: 16
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory
Jihyung Kim, Osung Kwon, Eunjin Lim, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 6, pp. 4588-4597
Closed Access | Times Cited: 14
A review of hafnium-based ferroelectrics for advanced computing
Xiangdong Xu, Z. Luo, Huabin Sun, et al.
Solid-State Electronics (2025), pp. 109053-109053
Closed Access
Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform
Anastasia Chouprik, Vitalii Mikheev, Ilya Margolin, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 5
Open Access | Times Cited: 4
Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions
Eunjin Lim, Dahye Kim, Jongmin Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 47, pp. 473001-473001
Closed Access | Times Cited: 4
Unraveling the origins of ferroelectricity in doped hafnia through carrier-mediated phase transitions
Gang Li, Shaoan Yan, Yulin Liu, et al.
npj Computational Materials (2025) Vol. 11, Iss. 1
Open Access
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer
Yongkai Liu, Tianyu Wang, Zhenhai Li, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 9
Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System
Ryun‐Han Koo, Wonjun Shin, Seung Whan Kim, et al.
Advanced Science (2023) Vol. 11, Iss. 5
Open Access | Times Cited: 9
Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications
Kangli Xu, Tianyu Wang, Jiajie Yu, et al.
Applied Physics Reviews (2024) Vol. 11, Iss. 2
Open Access | Times Cited: 3
Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films
Zhenhai Li, Tianyu Wang, Yongkai Liu, et al.
IEEE Electron Device Letters (2022) Vol. 44, Iss. 1, pp. 56-59
Closed Access | Times Cited: 12
Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction With Different Bottom Electrodes
Zhenhai Li, Jialin Meng, Jiajie Yu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 6, pp. 947-950
Closed Access | Times Cited: 5
Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration
Zheng-Xu Zhu, Haoyu Zhao, He Wang, et al.
Rare Metals (2024)
Closed Access | Times Cited: 1
Thermodynamic potential construction and biaxial stress analysis of K0.4Na0.6NbO3 single crystals
Mingxuan Liu, Chengpeng Hu, Xiangda Meng, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 11
Closed Access | Times Cited: 1
Emulating Low-Power Synaptic Plasticity in a Solution-Processed Oxide-Based Long Retention Memory Transistor with High Learning Accuracy
Rajarshi Chakraborty, Subarna Pramanik, Nila Pal, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 36, pp. 47820-47831
Closed Access
Universal insights into the origin of ferroelectricity in doped hafnia
Minghua Tang, Gang Li, Shaoan Yan, et al.
Research Square (Research Square) (2024)
Open Access
Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices
Ruo-Yin Liao, Hsuan-Han Chen, Ping‐Yu Lin, et al.
Materials (2023) Vol. 16, Iss. 9, pp. 3306-3306
Open Access
Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films
Jihoon Jeon, Song‐Hyeon Kuk, Ah-Jin Cho, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 23
Closed Access
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