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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition
Se Eun Kim, Ju Young Sung, Jae Deock Jeon, et al.
Advanced Materials Technologies (2022) Vol. 8, Iss. 20
Closed Access | Times Cited: 21

Showing 21 citing articles:

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2
Patrick D. Lomenzo, Liam Collins, Richard Ganser, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 41
Open Access | Times Cited: 24
Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices
Young-Hwan Lee, Hyun Woo Jeong, Se Hyun Kim, et al.
Materials Science in Semiconductor Processing (2023) Vol. 160, pp. 107411-107411
Closed Access | Times Cited: 19
Atomic Layer Growth of Rutile TiO2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering
Taikyu Kim, Jihoon Jeon, Seung Ho Ryu, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 26, pp. 33877-33884
Closed Access | Times Cited: 7
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
Minsoo Kim, Jong Yeog Son
Journal of Materials Science (2024) Vol. 59, Iss. 7, pp. 2988-2997
Closed Access | Times Cited: 6
High-Temperature Atomic Layer Deposition of Rutile TiO2 Films on RuO2 Substrates: Interfacial Reactions and Dielectric Performance
Jihoon Jeon, Taikyu Kim, Myoungsu Jang, et al.
Chemistry of Materials (2024) Vol. 36, Iss. 7, pp. 3326-3333
Closed Access | Times Cited: 6
Si-doped HZO and ZrO2 for hysteresis free high-k dielectric
Harshil Kashyap, Ping-Che Lee, Kisung Chae, et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2025) Vol. 43, Iss. 2
Closed Access
Demonstration of NiCo as an Alternative Metal for Post-Cu Interconnects
Ju Young Sung, Gi-Young Jo, Sang Mo Moon, et al.
ACS Nano (2025)
Closed Access
Suppressing oxygen vacancy formation in ZrO2 to improve electrical properties by employing MoO2 bottom electrode
Jae Sung Yun, Seungyeon Kim, Chaeyeong Hwang, et al.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2025) Vol. 43, Iss. 2
Closed Access
Selective Surface Passivation for Ultrathin and Continuous Metallic Films via Atomic Layer Deposition
Han Kim, Taeseok Kim, Min-Seok Kim, et al.
Nano Letters (2025) Vol. 25, Iss. 10, pp. 4101-4107
Closed Access
Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source
Jaewook Yoo, Hyeun Seung Jo, Seung‐Bae Jeon, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 8
Closed Access | Times Cited: 3
Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoNx Electrodes via TiN Passivation for DRAM Cell Capacitor Applications
Wangu Kang, Ji Sang Ahn, J.H. Lee, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 42, pp. 57446-57456
Closed Access | Times Cited: 2
Strained BaTiO3 thin films via in-situ crystallization using atomic layer deposition on SrTiO3 substrate
Heung-Yoon Choi, Jae Deock Jeon, Se Eun Kim, et al.
Materials Science in Semiconductor Processing (2023) Vol. 160, pp. 107442-107442
Closed Access | Times Cited: 5
Improved electrical performance of ultra-thin BexMg1−xO films using super-cycle atomic layer deposition
Haewon Song, Bowen Wang, Jonghoon Shin, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 8, pp. 2714-2722
Open Access | Times Cited: 1
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s
Tae Hyeon Noh, Simin Chen, Hyo‐Bae Kim, et al.
Nanoscale (2024) Vol. 16, Iss. 35, pp. 16467-16476
Open Access | Times Cited: 1
Performance variation with pristine and doped high‐k materials via atomic layer deposition
Eun Su Jung, JinUk Yoo, Tae-Min Choi, et al.
International Journal of Applied Ceramic Technology (2024)
Closed Access | Times Cited: 1
Exploring the Morphotropic Phase Boundary in HfO2‐Based Ferroelectrics for Advanced High‐k Dielectrics
Seungyeol Oh, Hojung Jang, Mostafa Habibi, et al.
Advanced Materials Technologies (2024)
Closed Access | Times Cited: 1
Alternative surface reaction route in the atomic layer deposition of NbN thin films for reduced resistivity
Hyeok Jae Lee, Seo Young Jang, Hye Min Lee, et al.
Journal of Alloys and Compounds (2023) Vol. 952, pp. 170033-170033
Closed Access | Times Cited: 3
Epitaxial growth of NbN thin films for electrodes using atomic layer deposition
Seo Young Jang, Hye Min Lee, Ju Young Sung, et al.
Applied Surface Science (2023) Vol. 636, pp. 157824-157824
Closed Access | Times Cited: 1
Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping
Yuanbiao Li, Xinyi Tang, Songming Miao, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 8, pp. 4914-4919
Closed Access
Suppression of Capacitor Leakage through Thermal Budget Control in DRAM With ZrO2 based Dielectrics
Dong-Sik Park, Eun‐Ok Lee, Jong-Min Lee, et al.
IEEE Access (2024) Vol. 13, pp. 35019-35028
Open Access
Oxidation and Etching of Thin Ruthenium Films in Low Ion Energy Oxygen Plasma
I. I. Amirov, Н. В. Алов, Pavel Yu. Sharanov, et al.
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques (2024) Vol. 18, Iss. 6, pp. 1359-1363
Closed Access
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