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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Che Chen Tho, Chenjiang Yu, Qin Tang, et al.
Advanced Materials Interfaces (2022) Vol. 10, Iss. 2
Closed Access | Times Cited: 46

Showing 1-25 of 46 citing articles:

Emerging Versatile Two‐Dimensional MoSi2N4 Family
Yan Yin, Qihua Gong, Min Yi, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 26
Open Access | Times Cited: 85
MA2Z4 family heterostructures: Promises and prospects
Che Chen Tho, San‐Dong Guo, Shi‐Jun Liang, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 4
Open Access | Times Cited: 63
Adsorption of gas molecules on intrinsic and defective MoSi2N4 monolayer: Gas sensing and functionalization
Zhen Cui, Hui Wu, Kunqi Yang, et al.
Sensors and Actuators A Physical (2023) Vol. 366, pp. 114954-114954
Closed Access | Times Cited: 53
Layer-sliding-mediated reversible tuning of interfacial electronic and optical properties of intercalated ZrO2/MoS2 van der Waals heterostructure
M.W. Younis, Toheed Akhter, Masood Yousaf, et al.
Journal of materials research/Pratt's guide to venture capital sources (2023) Vol. 38, Iss. 23, pp. 4995-5007
Closed Access | Times Cited: 28
Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering
Tong Su, Yueyan Li, Qianqian Wang, et al.
Journal of Physics D Applied Physics (2023) Vol. 56, Iss. 23, pp. 234001-234001
Open Access | Times Cited: 25
Evolution of Metal Tellurides for Energy Storage/Conversion: From Synthesis to Applications
Muhammad Ahmad, Tehseen Nawaz, Iftikhar Hussain, et al.
Small (2024) Vol. 20, Iss. 28
Closed Access | Times Cited: 11
Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor
Che Chen Tho, Shibo Fang, Yee Sin Ang
(2025) Vol. 1, Iss. 1
Open Access | Times Cited: 1
Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors
Yu Shu, Yongqian Liu, Zhou Cui, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 3
Open Access | Times Cited: 21
Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures
Yu-Fei Lang, Daifeng Zou, Ying Xu, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 5
Closed Access | Times Cited: 8
Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Liemao Cao, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 7
Open Access | Times Cited: 7
Universal model for electron thermal-field emission from two-dimensional semimetals
L. K. Ang, Yee Sin Ang, Ching Hua Lee
Physics of Plasmas (2023) Vol. 30, Iss. 3
Open Access | Times Cited: 16
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts
Wen Ai, Yongfei Shi, Xiaohui Hu, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5606-5613
Closed Access | Times Cited: 14
Ohmic contacts in MXene/MoSi2N4 heterojunctions
X X Zhang, Jun-Yue Zheng, Yucui Xiang, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 2
Closed Access | Times Cited: 13
Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure
Son‐Tung Nguyen, Cuong Q. Nguyen, Yee Sin Ang, et al.
Langmuir (2023) Vol. 39, Iss. 18, pp. 6637-6645
Closed Access | Times Cited: 13
Enhancing the electronic and optical properties of the metal/semiconductor NbS2/BSe nanoheterostructure towards advanced electronics
SonBinh T. Nguyen, T. T. T. Huong, Nguyễn Xuân Ca, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 5, pp. 1565-1572
Open Access | Times Cited: 4
Tunable abundant valley Hall effect and chiral spin–valley locking in Janus monolayer VCGeN4
Jia Kang, Xiao-Jing Dong, Sheng-shi Li, et al.
Nanoscale (2024) Vol. 16, Iss. 17, pp. 8639-8649
Closed Access | Times Cited: 4
Symmetry-breaking-enhanced power conversion efficiency of 2D van der Waals heterostructures
Tao Huang, Zixuan Yang, Lei Li, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 3
Closed Access | Times Cited: 4
Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4−x) family
Jinghui Wei, Qikun Tian, Xiulan Xu, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 16
Closed Access
Reasonable designing interfacial charge transfer channels in 2D metal–semiconductor contact: A time-domain ultrafast dynamic study
Xianghong Niu, Wenchao Shan, Zifan Niu, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 17
Closed Access
Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to 2-D Semiconductors
Zhuoling Jiang, Tong Su, Cherq Chua, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 4, pp. 1509-1519
Open Access | Times Cited: 10
Theoretical Design of a Multifunctional Two-Dimensional HfGeTe4 -Based Optoelectronic Device Utilizing the Anisotropic Photogalvanic Effect
Degao Xu, Jindou Ru, Biao Cai, et al.
Physical Review Applied (2023) Vol. 20, Iss. 5
Closed Access | Times Cited: 10
Computational study of two-dimensional SnGe2N4 as a promising photocatalyst for the oxygen evolution reaction
Noor ul Ain, Arooba Kanwal, Abdul Jalil, et al.
New Journal of Chemistry (2024) Vol. 48, Iss. 11, pp. 4922-4930
Closed Access | Times Cited: 3
First-Principles Prediction of 2D Semiconductors MAN3 (M = V, Nb, Ta; A = Si, Ge) from the MA2N4 Family: Implication for Optoelectronics Applications
Ying Zhu, Peiyue Li, Jun‐Hui Yuan, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 7, pp. 7300-7311
Closed Access | Times Cited: 3
Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi2N4 (X = Mo, W) Monolayers
Abdul Jalil, Tingkai Zhao, Ammara Firdous, et al.
Langmuir (2024) Vol. 40, Iss. 16, pp. 8463-8473
Closed Access | Times Cited: 3
Designing the weak Fermi pinning and p-type Ohmic contacts to monolayer halide perovskite Cs3Bi2I9
Wei Tan, Yu-Fei Lang, Y.D. Li, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 6
Closed Access
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