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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors
He Wang, Zeyu Guan, Jiachen Li, et al.
Advanced Materials (2024) Vol. 36, Iss. 15
Closed Access | Times Cited: 19

Showing 19 citing articles:

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
Aiji Wang, Rui Chen, Yun Yu, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 2
Strategic Development of Memristors for Neuromorphic Systems: Low‐Power and Reconfigurable Operation
Jang Woo Lee, Jiye Han, Boseok Kang, et al.
Advanced Materials (2025)
Closed Access | Times Cited: 1
HfO2-Based Ferroelectric Synaptic Devices: Challenges and Engineering Solutions
Taegyu Kwon, Heejin Choi, Dong Hyun Lee, et al.
Chemical Communications (2025)
Closed Access
Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier
Yating Cao, Jingchao Xiao, Hailong Qiao, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 6
Closed Access
Hybrid Ferroelectric Tunnel Junctions: State of the Art, Challenges, and Opportunities
King-Fa Luo, Zhijun Ma, Daniel Sando, et al.
ACS Nano (2025)
Open Access
Structural and electrical properties of HfO2 at high pressure
Xiaomei Pan, Erqiao Xue, Wenguang Li, et al.
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 11
Closed Access
Flexible BaTiO3 Ferroelectric Nonvolatile Memory for Neuromorphic Computation
Yiming Peng, Xingpeng Liu, Guojian Luo, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Ultralow Power Optoelectronic Memtransistors Based on Vertical WS2/In2Se3 van der Waals Heterostructures
Xikui Ma, Yumeng Zhou, Ru Li, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Recent Progress on Heterojunction‐Based Memristors and Artificial Synapses for Low‐Power Neural Morphological Computing
Zhi‐Xiang Yin, Hao Chen, Shuo Yin, et al.
Small (2025)
Closed Access
Implementation of Multiply Accumulate Operation and Convolutional Neural Network Based on Ferroelectric Tunnel Junction Memristors
Ziming Cheng, He Wang, Zeyu Guan, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Increased Curie temperature in lithium substituted ferroelectric niobate perovskite via soft polar mode enhancement
Hao‐Cheng Thong, Fang‐Zhou Yao, Xianxian Cai, et al.
npj Computational Materials (2025) Vol. 11, Iss. 1
Open Access
High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
Yefan Zhang, Xiaopeng Luo, Xiao Long, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 13
Closed Access
Low-Power Memristor for Neuromorphic Computing: From Materials to Applications
Zhipeng Xia, Xiao Wei Sun, Zhenlong Wang, et al.
Nano-Micro Letters (2025) Vol. 17, Iss. 1
Open Access
Can ferroelectric tunnel junction be a game changer as eNVM and in neuromorphic hardware?
Sayani Majumdar
APL Machine Learning (2025) Vol. 3, Iss. 2
Open Access
Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration
Zheng-Xu Zhu, Haoyu Zhao, He Wang, et al.
Rare Metals (2024)
Closed Access | Times Cited: 1
Influence of TiN diffusion barrier on the leakage current and ferroelectricity in Al-doped HfOx ferroelectric tunneling junction and its application to neuromorphic computing
Eunjin Lim, Euncho Seo, Sungjun Kim
Nanoscale (2024) Vol. 16, Iss. 41, pp. 19445-19452
Closed Access | Times Cited: 1
Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling
Binjian Zeng, Lihua Yin, Ruiping Liu, et al.
Advanced Materials (2024)
Closed Access | Times Cited: 1
Symmetric and Energy‐Efficient Conductance Update in Ferroelectric Tunnel Junction for Neural Network Computing
Zeyu Guan, Zijian Wang, Shengchun Shen, et al.
Advanced Materials Technologies (2024)
Closed Access
High-Performance Artificial Synapse Developed by HZO on (110) NSTO
Liang Tian, Mengshuang Chi, Yilin Zhao, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 16, pp. 19006-19013
Closed Access
Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier
Zhijun Wu, Tianpeng Duan, Zhihong Tian, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 11
Closed Access
Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions
Wonjun Shin, Changhyeon Han, Jangsaeng Kim, et al.
Advanced Electronic Materials (2024)
Open Access
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