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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, et al.
Advanced Materials (2022) Vol. 35, Iss. 43
Open Access | Times Cited: 92

Showing 1-25 of 92 citing articles:

Memristor-based neural networks: a bridge from device to artificial intelligence
Zelin Cao, Bai Sun, Guangdong Zhou, et al.
Nanoscale Horizons (2023) Vol. 8, Iss. 6, pp. 716-745
Closed Access | Times Cited: 68
Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges
Le Zhao, Hongyuan Fang, Jie Wang, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 3
Open Access | Times Cited: 34
Multifunctional optoelectronic memristor based on CeO2/MoS2 heterojunction for advanced artificial synapses and bionic visual system with nociceptive sensing
Yong-Hui Lin, Wenxiao Wang, Rongliang Li, et al.
Nano Energy (2024) Vol. 121, pp. 109267-109267
Closed Access | Times Cited: 29
Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
Aiji Wang, Rui Chen, Yun Yu, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 1
Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration
Heng Xiang, Yu‐Chieh Chien, Lingqi Li, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 42
Closed Access | Times Cited: 29
Advances of embedded resistive random access memory in industrial manufacturing and its potential applications
Z. G. Wang, Yixian Song, Guobin Zhang, et al.
International Journal of Extreme Manufacturing (2024) Vol. 6, Iss. 3, pp. 032006-032006
Open Access | Times Cited: 12
A High Working Temperature Multiferroic Induced by Inverse Temperature Symmetry Breaking
Lei-Yu Zhan, Yu Zhou, Na Li, et al.
Journal of the American Chemical Society (2024) Vol. 146, Iss. 8, pp. 5414-5422
Closed Access | Times Cited: 9
Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate
Yanxiao Sun, Yankun Wang, Zhe Wang, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 37
Closed Access | Times Cited: 8
Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes
Kun Yang, Hyun Woo Jeong, Jaewook Lee, et al.
Journal of Materiomics (2025), pp. 101015-101015
Open Access | Times Cited: 1
Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications
Jaewook Yoo, Hyeonjun Song, Hongseung Lee, et al.
Electronics (2023) Vol. 12, Iss. 10, pp. 2297-2297
Open Access | Times Cited: 17
A perspective on the physical scaling down of hafnia-based ferroelectrics
Ju Yong Park, Dong Hyun Lee, Geun Hyeong Park, et al.
Nanotechnology (2023) Vol. 34, Iss. 20, pp. 202001-202001
Closed Access | Times Cited: 16
Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing
Bo Shen, Haoran Sun, Xianyu Hu, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 30
Closed Access | Times Cited: 7
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
Yuanquan Huang, Hongye Yuan, Bowen Nie, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 13
Closed Access | Times Cited: 7
Ferroelectric tunnel junctions: promise, achievements and challenges
Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 25, pp. 253002-253002
Closed Access | Times Cited: 5
Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches
Minjong Lee, Dushyant Narayan, Jin-Hyun Kim, et al.
ACS Applied Electronic Materials (2024)
Closed Access | Times Cited: 5
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory
Jihyung Kim, Osung Kwon, Eunjin Lim, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 6, pp. 4588-4597
Closed Access | Times Cited: 14
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
Hyojun Choi, Yong Hyeon Cho, Se Hyun Kim, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 4, pp. 983-997
Closed Access | Times Cited: 4
2D Molecular Ferroelectric with Large Out‐of‐plane Polarization for In‐Memory Computing
Jie Yao, Zi‐Jie Feng, Zhenliang Hu, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 22
Closed Access | Times Cited: 4
Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures
Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 7
Closed Access | Times Cited: 4
Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic
Yangliu Wu, Zhaozhuo Zeng, Haipeng Lu, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 4
Prediction of neuronal functionality of asymmetric ferroelectric tunneling junction with coupled polarization and thermal dynamics
Zhenxun Tang, Linjie Liu, Jianyuan Zhang, et al.
Journal of Applied Physics (2025) Vol. 137, Iss. 2
Closed Access
HfO2-Based Ferroelectric Synaptic Devices: Challenges and Engineering Solutions
Taegyu Kwon, Heejin Choi, Dong Hyun Lee, et al.
Chemical Communications (2025)
Closed Access
Unconventional Ferroelectric‐Ferroelastic Switching Mediated by Non‐Polar Phase in Fluorite Oxides
Shiyu Wang, Xinyan Li, Zhuohui Liu, et al.
Advanced Materials (2025)
Closed Access
Temperature Gradients as a Data Storage Principle
J. Schoenmaker, Pâmella Gonçalves Martins, Júlio Carlos Teixeira
Entropy (2025) Vol. 27, Iss. 2, pp. 129-129
Open Access
Hybrid Ferroelectric Tunnel Junctions: State of the Art, Challenges, and Opportunities
King-Fa Luo, Zhijun Ma, Daniel Sando, et al.
ACS Nano (2025)
Open Access
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