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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

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Showing 1-25 of 117 citing articles:

High-crystallinity and enhanced mobility in In2O3 thin-film transistors via metal-induced method
Zhipeng Chen, Zhanglong Fu, Tingting Jin, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 3
Closed Access | Times Cited: 1
High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach
Jae Seok Hur, Min Jae Kim, Seong Hun Yoon, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 43, pp. 48857-48867
Closed Access | Times Cited: 38
High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
Min Hoe Cho, Cheol Hee Choi, Min Jae Kim, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 15, pp. 19137-19151
Closed Access | Times Cited: 23
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
Ae Rim Choi, Dong Hyun Lim, So‐Yeon Shin, et al.
Chemistry of Materials (2024) Vol. 36, Iss. 5, pp. 2194-2219
Closed Access | Times Cited: 11
Toward Smart, Flexible, and Omnidirectional Self-Powered Photodetection by an All-Solution-Processed In2O3/Pbl2 Heterojunction
Jie Zhang, Mingxu Wang, Pengsheng Li, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 3, pp. 3685-3693
Closed Access | Times Cited: 8
All‐Solution‐Processed InGaO/PbI2 Heterojunction for Self‐Powered Omnidirectional Near‐Ultraviolet Photodetection and Imaging
Jie Zhang, Zixu Sa, Pengsheng Li, et al.
Advanced Optical Materials (2024) Vol. 12, Iss. 13
Closed Access | Times Cited: 8
Mixed‐Halide Perovskites with Suppressed Phase Segregation for Large Modulation Depth and High‐Stability Terahertz Modulators
Xunjun He, Binchao Sun, Guangjun Lu, et al.
Small Structures (2025)
Open Access | Times Cited: 1
Highly Stretchable, Knittable, Wearable Fiberform Hydrovoltaic Generators Driven by Water Transpiration for Portable Self‐Power Supply and Self‐Powered Strain Sensor
Guoxi Luo, J. Xie, Jielun Liu, et al.
Small (2023) Vol. 20, Iss. 12
Closed Access | Times Cited: 19
Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 5, pp. 2317-2323
Closed Access | Times Cited: 17
Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer
Joo Hee Jeong, Seong Hun Yoon, Seung Hee Lee, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 5, pp. 849-852
Closed Access | Times Cited: 7
Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer
Joo Hee Jeong, Seung Wan Seo, Dongseon Kim, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 7
Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction
Saransh Shrivastava, Hsiao-Ni Chi, Stephen Ekaputra Limantoro, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 13
Open Access | Times Cited: 6
Approaches for 3D Integration Using Plasma‐Enhanced Atomic‐Layer‐Deposited Atomically‐Ordered InGaZnO Transistors with Ultra‐High Mobility
Yoon‐Seo Kim, Hye‐Jin Oh, Junghwan Kim, et al.
Small Methods (2023) Vol. 7, Iss. 10
Closed Access | Times Cited: 15
Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors
Ho Young Lee, Jae Seok Hur, Iaan Cho, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 44, pp. 51399-51410
Closed Access | Times Cited: 15
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 5
Highly Efficient Utilization of High‐Energy Excitons in Multilayer WSe2 for Self‐Powered Ultraviolet Photodetector With Near‐Unity External Quantum Efficiency
Chuxin Yan, Yuanzheng Li, Rui Li, et al.
Laser & Photonics Review (2024)
Closed Access | Times Cited: 5
All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process
Jingwei Zhang, Guangji Wang, Zhimin Chai, et al.
ACS Nano (2024) Vol. 18, Iss. 31, pp. 20493-20503
Closed Access | Times Cited: 4
Cr3+‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)2O4 and Zn2GeO4 for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing
Zhigang Wang, Jiayu Wang, Dangli Gao, et al.
Luminescence (2024) Vol. 39, Iss. 11, pp. 1-8
Closed Access | Times Cited: 4
Direct Observation of Photoexcited Localized Energy States of Atomically Deposited ZnO Transistors by Analyzing Transfer Characteristics
Minho Yoon, Seongjae Choi, Heung‐Sik Kim
ACS Omega (2025) Vol. 10, Iss. 1, pp. 1581-1590
Open Access
Enhancing AC stress stability in amorphous indium gallium zinc oxide thin-film transistors via controlled hydrogen diffusion
Jae-Sung Kim, Seonggeun Kim, Hyun Jae Kim, et al.
Journal of Materials Chemistry C (2025)
Closed Access
Enhanced electrical stability and reliability of amorphous IGZO/HfO2 thin film transistors with CF4 plasma treatment
Gyulee Kim, Sunbum Kim, Minhyuk Kim, et al.
Applied Surface Science (2025), pp. 162365-162365
Closed Access
Design of an Atomic Layer-Deposited In2O3/Ga2O3 Channel Structure for High-Performance Thin-Film Transistors
Jae Seok Hur, Joo Hee Jeong, Gwang‐Bok Kim, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Perception and Recognition of Proximity and Contact Processes via Parallel Double‐Transistor Configuration
Shixin Liu, Jiawei Xu, Wanyu Zeng, et al.
Advanced Functional Materials (2025)
Open Access
Ultrahigh field-effect mobility of 147.5 cm2/Vs in ultrathin In2O3 transistors via passivating the surface of polycrystalline HfO2 gate dielectrics
Taikyu Kim, Seung Ho Ryu, J.-W. Jeon, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 3
Closed Access
Process design for improvement in device performance of top-gate TFTs using In-Sn-Zn-O channels prepared by thermal atomic-layer deposition
Jongryeol Yoo, Young-Ha Kwon, Nak‐Jin Seong, et al.
Materials Science in Semiconductor Processing (2025) Vol. 190, pp. 109324-109324
Closed Access
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