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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices
Emanuel Carlos, Rita Branquinho, Rodrigo Martins, et al.
Advanced Materials (2020) Vol. 33, Iss. 7
Closed Access | Times Cited: 160

Showing 1-25 of 160 citing articles:

Catalyzing Artificial Photosynthesis with TiO2 Heterostructures and Hybrids: Emerging Trends in a Classical yet Contemporary Photocatalyst
Xiaowen Ruan, Shijie Li, Chengxiang Huang, et al.
Advanced Materials (2023) Vol. 36, Iss. 17
Closed Access | Times Cited: 71
Ultra-fast switching memristors based on two-dimensional materials
S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 62
Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing
Tomás Pinheiro, Maria Morais, Sara Silvestre, et al.
Advanced Materials (2024) Vol. 36, Iss. 26
Open Access | Times Cited: 48
Laser printed microelectronics
Liang Yang, Hongrong Hu, Alexander Scholz, et al.
Nature Communications (2023) Vol. 14, Iss. 1
Open Access | Times Cited: 47
CogniFiber: Harnessing Biocompatible and Biodegradable 1D Collagen Nanofibers for Sustainable Nonvolatile Memory and Synaptic Learning Applications
Kasturi A. Rokade, Dhananjay D. Kumbhar, Snehal L. Patil, et al.
Advanced Materials (2024) Vol. 36, Iss. 24
Closed Access | Times Cited: 37
Emergent solution based IGZO memristor towards neuromorphic applications
Raquel Azevedo Martins, Emanuel Carlos, Jonas Deuermeier, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 6, pp. 1991-1998
Open Access | Times Cited: 53
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Isyaku Bature, et al.
Discover Nano (2023) Vol. 18, Iss. 1
Open Access | Times Cited: 41
Flexible Oxide Thin Film Transistors, Memristors, and Their Integration
Alin Panca, Julianna Panidi, Hendrik Faber, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 20
Open Access | Times Cited: 41
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Maria Pereira, Rodrigo Martins, Elvira Fortunato, et al.
Neuromorphic Computing and Engineering (2023) Vol. 3, Iss. 2, pp. 022002-022002
Open Access | Times Cited: 31
Direct Observation of Oxygen Ion Dynamics in a WO3‐x based Second‐Order Memristor with Dendritic Integration Functions
Ya Lin, Fanqi Meng, Tao Zeng, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 35
Closed Access | Times Cited: 30
ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses
Anirudh Kumar, Km. Preeti, Satendra Pal Singh, et al.
Materials Today (2023) Vol. 69, pp. 262-286
Closed Access | Times Cited: 25
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Ewelina Nowak, Edyta Chłopocka, Mirosław Szybowicz
Crystals (2023) Vol. 13, Iss. 3, pp. 416-416
Open Access | Times Cited: 23
Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
Rajesh Kumar Rajagopal, Alexei Kalaboukhov, Y.Q. Weng, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19225-19234
Open Access | Times Cited: 11
Confirmation of charge carriers’ types based on HOMO-LUMO positions in the active layer of a WORM memory device
Debajyoti Bhattacharjee, Chandan Debnath, Syed Arshad Hussain, et al.
Journal of Materials Science Materials in Electronics (2024) Vol. 35, Iss. 2
Closed Access | Times Cited: 10
Optically Mediated Nonvolatile Resistive Memory Device Based on Metal–Organic Frameworks
Xue Yang, Jian Huang, Jingjun Li, et al.
Advanced Materials (2024) Vol. 36, Iss. 35
Closed Access | Times Cited: 8
Recent Advances in Spinel Ferrite-Based Thin Films: Synthesis, Performances, Applications, and Beyond
Aize Hao, Xueer Ning
Frontiers in Materials (2021) Vol. 8
Open Access | Times Cited: 47
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, et al.
Materials (2021) Vol. 14, Iss. 24, pp. 7535-7535
Open Access | Times Cited: 46
Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations
Bai Sun, Jenner H. L. Ngai, Guangdong Zhou, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 36, pp. 41304-41315
Closed Access | Times Cited: 37
Dependence of the Physical Properties of Titanium Dioxide (TiO2) Thin Films Grown by Sol-Gel (Spin-Coating) Process on Thickness
F. Zeribi, A. Attaf, A. Derbali, et al.
ECS Journal of Solid State Science and Technology (2022) Vol. 11, Iss. 2, pp. 023003-023003
Open Access | Times Cited: 31
Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures
S. P. Swathi, S. Angappane
Journal of Alloys and Compounds (2022) Vol. 913, pp. 165251-165251
Closed Access | Times Cited: 29
An Interface‐Type Memristive Device for Artificial Synapse and Neuromorphic Computing
Sundar Kunwar, Zachary Jernigan, Zach Hughes, et al.
Advanced Intelligent Systems (2023) Vol. 5, Iss. 8
Open Access | Times Cited: 19
Flexible Memristor-Based Nanoelectronic Devices for Wearable Applications: A Review
Zhaowei Rao, Xufei Wang, Shuangsuo Mao, et al.
ACS Applied Nano Materials (2023) Vol. 6, Iss. 20, pp. 18645-18669
Closed Access | Times Cited: 18
Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing
Alireza Moazzeni, Hadi Riyahi Madvar, Samaneh Hamedi, et al.
ACS Applied Nano Materials (2023) Vol. 6, Iss. 3, pp. 2236-2248
Closed Access | Times Cited: 17
1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature
Jia Cheng Li, Yuan Xiao, Song Wu, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 14, pp. 17766-17777
Closed Access | Times Cited: 6
Metal-polypyridyl complexes mimicking electronic functions
Rajwinder Kaur, Bijai Singh, Vikram Singh, et al.
Coordination Chemistry Reviews (2024) Vol. 514, pp. 215872-215872
Open Access | Times Cited: 6
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