OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Toward Sustainable Ultrawide Bandgap van der Waals Materials: An ab initio Screening Effort
Chuin Wei Tan, Linqiang Xu, Chen Chen Er, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 11
Open Access | Times Cited: 22

Showing 22 citing articles:

Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study
Hengze Qu, Shengli Zhang, Jiang Cao, et al.
Science Bulletin (2024) Vol. 69, Iss. 10, pp. 1427-1436
Closed Access | Times Cited: 18

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer
Jun Zhao, Yunxi Qi, Can Yao, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 9
Closed Access | Times Cited: 14

Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Liemao Cao, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 7
Open Access | Times Cited: 6

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact
Xiang Liu, Jingying Yang, Xiaohui Deng, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 4, pp. 2568-2574
Closed Access | Times Cited: 5

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure
Son T. Nguyen, Nguyen N. Hieu, Huy Le‐Quoc, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 14, pp. 3624-3631
Open Access | Times Cited: 4

Intrinsic spin Hall and Rashba effects in metal nitride bromide monolayer for spin-orbitronics
P. K. Nandi, Shivam Sharma, Abir De Sarkar
Journal of Applied Physics (2024) Vol. 135, Iss. 23
Open Access | Times Cited: 4

Dipole-induced transitions from Schottky to Ohmic contact at Janus MoSiGeN4/metal interfaces
Wen Ai, Xiaohui Hu, Tao Xu, et al.
Nanoscale Horizons (2025)
Closed Access

First Principles Studies on Structural, Elastic, Electronic, Optical Properties of MgSrPb and MgSrSi Half Heusler Alloys
Junaid Khan, Ashim Dutta, T. Mundad, et al.
Journal of Inorganic and Organometallic Polymers and Materials (2025)
Closed Access

First-principles insights into Bi2XO5 (X = Se, Te) monolayers as high-k gate dielectrics for 2D electronics
Huan Liu, Lixiang Rao, Junjie Qi, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 7
Closed Access

Ambiently Stable Two-Dimensional β-CuI Monolayers with Self-Trapping Exciton Luminescence
Bingquan Peng, Jie Jiang, Haonan Wang, et al.
ACS Materials Letters (2025), pp. 1845-1851
Closed Access

Influence Mechanism of Vertical Mirror Symmetry on Out-of-Plane Dielectric Properties in 2D Materials
Yang Hu, Hengze Qu, Xuemin Hu, et al.
The Journal of Physical Chemistry Letters (2025), pp. 4124-4130
Closed Access

BA2N3 ( A=Si,Ge ) monolayers: Multifunctional 2D polar …
Ruoyan Xu, Junlin Luo, Rui Peng, et al.
Physical Review Materials (2025) Vol. 9, Iss. 4
Closed Access

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 3

Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors
Xuemin Hu, Yu Huang, Hengze Qu, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 44, pp. 11035-11041
Closed Access | Times Cited: 3

High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation
S. Y. Yang, Hao Shi, Yang Hu, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 21, pp. 5721-5727
Closed Access | Times Cited: 2

Mapping Rashba-spin-valley coalescence in two-dimensional monolayers via high-throughput first-principles calculations
Anu Arora, Shivam Sharma, Abir De Sarkar
Journal of Applied Physics (2024) Vol. 136, Iss. 12
Closed Access | Times Cited: 2

Single-Layer GaInTe3: Water-Splitting Photocatalyst Low Exciton Binding and Ultrahigh Solar Conversion Efficiency
Jia-Yu Bao, Shuangchun Wen, Yizhi Xiang, et al.
Vacuum (2024) Vol. 231, pp. 113795-113795
Closed Access | Times Cited: 1

Strain manipulates the electric, elastic, thermal, and optical properties of MXene Lu2CT2 (T = F, OH)
Shaobo Chen, San‐Dong Guo, Bing Lv
The European Physical Journal Plus (2024) Vol. 139, Iss. 6
Closed Access

Coexisting Ferroelectric, Ferromagnetic, and Ferrovalley Polarizations in Single Quintuple Layer ReAlGe2X6 (X = S, Se)
Jiatian Guo, Ying Chen, Ming‐Xing Li, et al.
The Journal of Physical Chemistry C (2024) Vol. 128, Iss. 26, pp. 10963-10973
Closed Access

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal–semiconductor heterostructures: first-principles prediction
Son T. Nguyen, Chương V. Nguyen, Huynh V. Phuc, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 19, pp. 4900-4906
Open Access

Tunable magnetism by nonmagnetic-doping in 2D flexible alkaline-earth metal halofluoride XYF (X = Ca/Sr/Ba, Y = Cl/Br/I) with ultra-wide bandgap
Yunlai Zhu, Xi Sun, Yongjie Zhao, et al.
Journal of Materials Science (2024) Vol. 59, Iss. 43, pp. 20335-20350
Closed Access

A Family of Two-Dimensional Quaternary Compounds A2BXY2 (A = K, Na; B = Li, Na; X = Al, Ga, In; Y = P, As, Sb) for Optoelectronics Applications
Run-Jie Peng, Ying Zhu, Jun‐Hui Yuan, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access

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