
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Ultra‐Steep‐Slope and High‐Stability of CuInP2S6/WS2 Ferroelectric Negative Capacitor Transistors by Passivation Effect and Dual‐Gate Modulation
Lei Zhao, Yunshan Liang, Jingyi Ma, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 44
Open Access | Times Cited: 14
Lei Zhao, Yunshan Liang, Jingyi Ma, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 44
Open Access | Times Cited: 14
Showing 14 citing articles:
Two-dimensional materials for future information technology: status and prospects
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures
Ruixia Wu, Hongmei Zhang, Huifang Ma, et al.
Chemical Reviews (2024) Vol. 124, Iss. 17, pp. 10112-10191
Closed Access | Times Cited: 18
Ruixia Wu, Hongmei Zhang, Huifang Ma, et al.
Chemical Reviews (2024) Vol. 124, Iss. 17, pp. 10112-10191
Closed Access | Times Cited: 18
2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1
Yujue Yang, Zihao Liu, Xueting Liu, et al.
Advanced Electronic Materials (2025)
Open Access
Yujue Yang, Zihao Liu, Xueting Liu, et al.
Advanced Electronic Materials (2025)
Open Access
Van der Waals Ferroelectric CuCrP2S6‐Enabled Hysteresis‐Free Negative Capacitance Field‐Effect Transistors
Han Chen, Yinfeng Long, Shiyu Zhang, et al.
Advanced Materials (2025)
Closed Access
Han Chen, Yinfeng Long, Shiyu Zhang, et al.
Advanced Materials (2025)
Closed Access
Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor
Chao Tan, Haijuan Wu, Minmin Zhao, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 3
Chao Tan, Haijuan Wu, Minmin Zhao, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 3
In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors
Mingxuan Yuan, Binbin Zhang, Jiliang Cai, et al.
Carbon Neutralization (2024) Vol. 3, Iss. 4, pp. 700-709
Open Access | Times Cited: 1
Mingxuan Yuan, Binbin Zhang, Jiliang Cai, et al.
Carbon Neutralization (2024) Vol. 3, Iss. 4, pp. 700-709
Open Access | Times Cited: 1
Construction and catalytic applications of advanced ceramic-supported single atoms
Chulong Jin, Qingqing Zhang, Adjapong Linda Akua Agyapomaa, et al.
Microstructures (2024) Vol. 4, Iss. 4
Open Access | Times Cited: 1
Chulong Jin, Qingqing Zhang, Adjapong Linda Akua Agyapomaa, et al.
Microstructures (2024) Vol. 4, Iss. 4
Open Access | Times Cited: 1
Progress and challenges in the synthesis of two-dimensional Van der Waals ferroic materials and heterostructures
Jia Wang, Junzhe Kang, Stasiu T. Chyczewski, et al.
Journal of Physics D Applied Physics (2024) Vol. 58, Iss. 6, pp. 063001-063001
Closed Access | Times Cited: 1
Jia Wang, Junzhe Kang, Stasiu T. Chyczewski, et al.
Journal of Physics D Applied Physics (2024) Vol. 58, Iss. 6, pp. 063001-063001
Closed Access | Times Cited: 1
2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics
Xinrui Chen, Tiantian Jiang, Hanbin Wang, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Xinrui Chen, Tiantian Jiang, Hanbin Wang, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories
Yanning Chen, Senlin Wang, Zhiyuan Liu, et al.
Journal of Alloys and Compounds (2024) Vol. 1010, pp. 178077-178077
Closed Access | Times Cited: 1
Yanning Chen, Senlin Wang, Zhiyuan Liu, et al.
Journal of Alloys and Compounds (2024) Vol. 1010, pp. 178077-178077
Closed Access | Times Cited: 1
2D Reconfigurable Memtransistor for High‐Performance Dual‐Mode Memory and Broadband Photodetection
Chao Tan, Haijuan Wu, Jiahui Chen, et al.
Advanced Functional Materials (2024)
Closed Access
Chao Tan, Haijuan Wu, Jiahui Chen, et al.
Advanced Functional Materials (2024)
Closed Access
ZnO/Ga2O3 Optoelectronic Device with Wide Response Wavelength
Dejie Yu, Tao Li, Jiangtao Li, et al.
(2024), pp. 75-79
Closed Access
Dejie Yu, Tao Li, Jiangtao Li, et al.
(2024), pp. 75-79
Closed Access
Two dimensional CuInP2S6/h-BN/MoTe2 van der Waals heterostructure phototransistor with double gate control
Sina Li, Junjie Zhou, Jingxian Xiong, et al.
Journal of Materials Chemistry C (2024) Vol. 13, Iss. 5, pp. 2378-2387
Closed Access
Sina Li, Junjie Zhou, Jingxian Xiong, et al.
Journal of Materials Chemistry C (2024) Vol. 13, Iss. 5, pp. 2378-2387
Closed Access
A reconfigurable memristor diode based on a CuInP2S6/graphene lateral heterojunction
Chen-Ting Liao, Mengyao Zhang, Yurong Jiang, et al.
Nanoscale (2024)
Closed Access
Chen-Ting Liao, Mengyao Zhang, Yurong Jiang, et al.
Nanoscale (2024)
Closed Access