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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Qiuhui Li, Chen Yang, Lin Xu, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 23
Closed Access | Times Cited: 19

Showing 19 citing articles:

MA2Z4 family heterostructures: Promises and prospects
Che Chen Tho, San‐Dong Guo, Shi‐Jun Liang, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 4
Open Access | Times Cited: 59
Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology
Xingyue Yang, Shibo Fang, 英根 李, et al.
ACS Applied Nano Materials (2025)
Closed Access
Physics-knowledge-integrated neural network for quantum transport prediction of field-effect transistors
Xiuying Zhang, Linqiang Xu, Jing Lu, et al.
Physical Review Applied (2025) Vol. 23, Iss. 3
Closed Access
Symmetric high-performance transport in n - and p -type HfSnS3 nanowire gate-all-around transistors toward sub-5-nm electronics
Chuyao Chen, Jialin Yang, Hengze Qu, et al.
Physical Review Applied (2025) Vol. 23, Iss. 4
Closed Access
Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures
Tiantian Cheng, Weizhi Meng, Man Luo, et al.
Small (2024) Vol. 20, Iss. 48
Open Access | Times Cited: 4
Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (
Shibo Fang, Qiuhui Li, Chen Yang, et al.
Physical Review Materials (2023) Vol. 7, Iss. 8
Closed Access | Times Cited: 7
Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 2
N - and P -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors
Qiuhui Li, Tao Zheng, Lin Xu, et al.
Physical Review Materials (2024) Vol. 8, Iss. 1
Closed Access | Times Cited: 1
Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD
Xiaoye Wang, Huayong Pan, Xiaoguang Yang, et al.
Journal of Alloys and Compounds (2024) Vol. 988, pp. 174312-174312
Closed Access | Times Cited: 1
Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li, et al.
ACS Applied Electronic Materials (2023) Vol. 6, Iss. 1, pp. 426-434
Closed Access | Times Cited: 3
基于隧穿宽度调制的具有超高开态电流的二维Tl2O隧穿场效应晶体管
Chuyao Chen, Jialin Yang, Wenhan Zhou, et al.
Science China Materials (2024) Vol. 67, Iss. 5, pp. 1661-1667
Open Access
Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation
Leyao Xu, Jinchang Liu, Cong Shao, et al.
Journal of Applied Physics (2024) Vol. 135, Iss. 13
Open Access
Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer
Yifan Jiang, Jiamin Tian, Tong Li, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access
Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects
Shun Song, Qin Lü, Zhi Wang, et al.
Nanomaterials (2024) Vol. 14, Iss. 23, pp. 1960-1960
Open Access
The enhancement of infrared characterization of passivated InAs nanowires
Qiuyang Li, Jingzhen Li, Haonan Chen, et al.
Micro and Nanostructures (2024) Vol. 191, pp. 207867-207867
Closed Access
Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate
Xiaoye Wang, Xiaoguang Yang, Tao Yang
Vacuum (2024) Vol. 232, pp. 113832-113832
Closed Access
Controllable Spin Rectification Behavior of Vertical and Lateral VSe2/WSe2 Heterojunctions Schottky Diodes
X. Liu, Hui Chen, Yuxuan Li, et al.
Physical Chemistry Chemical Physics (2024)
Closed Access
Excitonic Floquet states in quantum wire
T. Chwiej, Grzegorz Dziembaj
Journal of Physics Condensed Matter (2023) Vol. 35, Iss. 35, pp. 355302-355302
Closed Access | Times Cited: 1
High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor
Kaşif Teker
Journal of nano research (2023) Vol. 81, pp. 1-8
Closed Access
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