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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors
Yifu Huang, Yuqian Gu, Sivasakthya Mohan, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 15
Open Access | Times Cited: 29

Showing 1-25 of 29 citing articles:

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges
Xiaodong Li, Nian‐Ke Chen, Bai‐Qian Wang, et al.
Advanced Materials (2024) Vol. 36, Iss. 15
Closed Access | Times Cited: 21
Quantum Conductance in Vertical Hexagonal Boron Nitride Memristors with Graphene-Edge Contacts
Jing Xie, Md Naim Patoary, Md Ashiqur Rahman Laskar, et al.
Nano Letters (2024) Vol. 24, Iss. 8, pp. 2473-2480
Closed Access | Times Cited: 10
Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems
Yoon‐Seok Lee, Yifu Huang, Yao‐Feng Chang, et al.
ACS Nano (2024) Vol. 18, Iss. 22, pp. 14327-14338
Closed Access | Times Cited: 7
Spin‐Coating Deposited SnS2 Thin Film‐Based Memristor for Emulating Synapses
Jiang Feng, Jiaming Fan, Zijian Zhang, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 36
Closed Access | Times Cited: 5
Highly Robust Double Memristive Device Based on Perovskite/Molybdenum Oxide‐Sulfide Compound Heterojunction System
Gion Kalemai, Apostolos Verykios, Georgios Chatzigiannakis, et al.
Advanced Electronic Materials (2025)
Open Access
Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor
Sung Jin Yang, Yu-Rim Jeon, Dong-Yoon Kim, et al.
npj 2D Materials and Applications (2025) Vol. 9, Iss. 1
Open Access
Leveraging Dual Resistive Switching in Quasi-2D Perovskite Memristors for Integrated Non-volatile Memory, Synaptic Emulation, and Reservoir Computing
Zhenwang Luo, Weisheng Wang, Junhui Wu, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Shining light on devices: New perspectives in non-volatile memory device and material investigation
Atif Jan, D. M. Kelly, Giuliana Di Martino
(2025) Vol. 1, Iss. 2
Open Access
Emerging 2D Material‐Based Synaptic Devices: Principles, Mechanisms, Improvements, and Applications
Zheyu Yang, Zhe Zhang, Shida Huo, et al.
SmartMat (2025) Vol. 6, Iss. 2
Open Access
Low-Voltage Gallium Oxide Memristor with Enhanced Cyclic Endurance, Stability, and Memory Window
Raufur Rahman Khan, Oh‐Hyung Kwon, Avishek Das, et al.
ACS Applied Electronic Materials (2025)
Closed Access
Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO2‐MoS2 Core–Shell Heterostructures for Future Bio‐Inspired Computing
Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, et al.
Small (2023) Vol. 20, Iss. 18
Closed Access | Times Cited: 11
Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor
Yangmin Diao, Feng Yang, Yongfang Jia, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 2, pp. 2477-2488
Closed Access | Times Cited: 4
Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials
Manasa Kaniselvan, Yu-Rim Jeon, Marko Mladenović, et al.
Nature Materials (2025)
Closed Access
A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application
Km. Komal, Mukhtiyar Singh, Bharti Singh
Journal of Materials Science (2024) Vol. 59, Iss. 29, pp. 13508-13531
Closed Access | Times Cited: 2
Analog monolayer SWCNTs-based memristive 2D structure for energy-efficient deep learning in spiking neural networks
Heba Abunahla, Yawar Abbas, Anteneh Gebregiorgis, et al.
Scientific Reports (2023) Vol. 13, Iss. 1
Open Access | Times Cited: 6
Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition
João Fernandes, Justyna Grzonka, Guilherme Araújo, et al.
ACS Applied Materials & Interfaces (2023) Vol. 16, Iss. 1, pp. 1767-1778
Open Access | Times Cited: 6
All-Inorganic CsPbBr3 Perovskite Planar-Type Memristors as Optoelectronic Synapses
Z. Q. Liu, Pengpeng Cheng, Ruyan Kang, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 1
Emerging functions of two-dimensional materials in memristive neurons
Y. HONG, Yanming Liu, Ruonan Li, et al.
Journal of Physics Materials (2024) Vol. 7, Iss. 3, pp. 032001-032001
Open Access | Times Cited: 1
Metal Penetration and Grain Boundary in MoS2 Memristors
Han Yan, Pingping Zhuang, Bo Li, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Direct Measurement of the Thermal Expansion Coefficient of Epitaxial WSe2 by Four-Dimensional Scanning Transmission Electron Microscopy
Theresa M. Kucinski, Rohit Dhall, Benjamin H. Savitzky, et al.
ACS Nano (2024) Vol. 18, Iss. 27, pp. 17725-17734
Open Access | Times Cited: 1
Memristive True Random Number Generator for Security Applications
Xianyue Zhao, Li-Wei Chen, Kefeng Li, et al.
Sensors (2024) Vol. 24, Iss. 15, pp. 5001-5001
Open Access | Times Cited: 1
High-Yield Production of Solution-Processed Highly Robust Organic Artificial Synapses by Thermal Treatments
Xu Zhang, Haipeng Yu, Wen Li, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 35, pp. 46527-46537
Closed Access | Times Cited: 1
Van der Waals Multilayered Films: Wafer‐Scale Synthesis and Applications in Electronics and Optoelectronics
Seok Joon Yun, Hayoung Ko, Sunny Park, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 1
Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices
Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan, et al.
Small Structures (2024)
Open Access | Times Cited: 1
Flexible SnO2–MoS2 based memristive device exhibiting stable and enhanced memory phenomenon
Km. Komal, Mukhtiyar Singh, Bharti Singh
Journal of Physics D Applied Physics (2023) Vol. 57, Iss. 10, pp. 105107-105107
Closed Access | Times Cited: 2
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