OpenAlex Citation Counts

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Junction Field‐Effect Transistors Based on PdSe₂/MoS₂ Heterostructures for Photodetectors Showing High Responsivity and Detectivity
Haoyun Wang, Zexin Li, Dongyan Li, et al.
Advanced Functional Materials (2021) Vol. 31, Iss. 49
Closed Access | Times Cited: 96

Showing 1-25 of 96 citing articles:

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges
Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, et al.
Chemical Reviews (2022) Vol. 122, Iss. 6, pp. 6514-6613
Open Access | Times Cited: 395

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization
Changhao Dai, Yunqi Liu, Dacheng Wei
Chemical Reviews (2022) Vol. 122, Iss. 11, pp. 10319-10392
Closed Access | Times Cited: 163

High‐Performance and Polarization‐Sensitive Imaging Photodetector Based on WS₂/Te Tunneling Heterostructure
Zhongtong Luo, Huakai Xu, Wei Gao, et al.
Small (2023) Vol. 19, Iss. 15
Closed Access | Times Cited: 77

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors
Waqas Ahmad, Liang Pan, Karim Khan, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 19
Closed Access | Times Cited: 42

Homo‐type α‐In₂Se₃/PdSe₂ Ferroelectric van der Waals Heterojunction Photodetectors with High‐performance and Broadband
Yanqi Mu, Jia Yang, Guancai Xie, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 27
Closed Access | Times Cited: 28

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review
Anique Ahmed, Muhammad Zahir Iqbal, A. Dahshan, et al.
Nanoscale (2024) Vol. 16, Iss. 5, pp. 2097-2120
Closed Access | Times Cited: 23

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe₂/Ta₂NiSe₅ Heterostructure for Multimode Optoelectronic Logic Gate
Zhu Tao, Kai Liu, Yao Zhang, et al.
ACS Nano (2024) Vol. 18, Iss. 17, pp. 11462-11473
Closed Access | Times Cited: 18

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures
Ruixia Wu, Hongmei Zhang, Huifang Ma, et al.
Chemical Reviews (2024) Vol. 124, Iss. 17, pp. 10112-10191
Closed Access | Times Cited: 18

Efficient Carrier Multiplication in Self-Powered Near-Ultraviolet γ-InSe/Graphene Heterostructure Photodetector with External Quantum Efficiency Exceeding 161%
Yuanzheng Li, Jia-Yu Pan, Chuxin Yan, et al.
Nano Letters (2024) Vol. 24, Iss. 24, pp. 7252-7260
Closed Access | Times Cited: 16

High‐Performance Infrared Self‐Powered Photodetector Based on 2D Van der Waals Heterostructures
Weijing Liu, Yifan Wu, Xinhe Bao, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 6

PdSe₂/NbSe₂ Heterojunction Photodetector with Broadband Detection and Polarization Sensitivity
Can Su, Mengyang Li, Hui Yan, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access | Times Cited: 5

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi₂O₂Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels
Weijun Wang, You Meng, Wei Wang, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 30
Closed Access | Times Cited: 56

Rational Design of WSe₂/WS₂/WSe₂ Dual Junction Phototransistor Incorporating High Responsivity and Detectivity
Zhongtong Luo, Mengmeng Yang, Dongsi Wu, et al.
Small Methods (2022) Vol. 6, Iss. 9
Closed Access | Times Cited: 45

An Ultrasensitive ReSe₂/WSe₂ Heterojunction Photodetector Enabled by Gate Modulation and its Development in Polarization State Identification
Wanglong Wu, Zhiyuan Liu, Zhicong Qiu, et al.
Advanced Optical Materials (2023) Vol. 12, Iss. 2
Closed Access | Times Cited: 34

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides
Waqas Ahmad, Jiang Wu, Qiandong Zhuang, et al.
Small (2023) Vol. 19, Iss. 16
Open Access | Times Cited: 30

Ideal Photodetector Based on WS₂/CuInP₂S₆ Heterostructure by Combining Band Engineering and Ferroelectric Modulation
Xiqiang Chen, Qiyang Zhang, Junhao Peng, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 11, pp. 13927-13937
Closed Access | Times Cited: 9

Advancements in Optoelectronics: Harnessing the Potential of 2D Violet Phosphorus
Waqas Ahmad, Aumber Abbas, Umer Younis, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 9

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit
Jintao Fu, Zhongmin Guo, Changbin Nie, et al.
The Innovation (2024) Vol. 5, Iss. 3, pp. 100600-100600
Open Access | Times Cited: 8

Bidirectional Photoresponse in a Mixed-Dimensional MoS₂/Ge Heterostructure and Its Optic-Neural Synaptic Behavior for Colored Pattern Recognition
Yichi Zhang, Bo Wang, Han Zhao, et al.
ACS Photonics (2023) Vol. 10, Iss. 5, pp. 1575-1582
Closed Access | Times Cited: 20

Polarization-Resolved Near-Infrared PdSe₂ p-i-n Homojunction Photodetector
Jiayang Jiang, Weiting Xu, Fuqiang Guo, et al.
Nano Letters (2023) Vol. 23, Iss. 20, pp. 9522-9528
Closed Access | Times Cited: 19

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature
Huide Wang, Haoxin Huang, Jiajia Zha, et al.
Advanced Optical Materials (2023) Vol. 11, Iss. 23
Open Access | Times Cited: 18

Selective Growth of Type‐II Weyl‐Semimetal and Van der Waals Stacking for Sensitive Terahertz Photodetection
Yuan He, Liu Yang, Zhen Hu, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 12
Closed Access | Times Cited: 16

Progress in photodetector devices utilizing transition metal dichalcogenides
Xin Li, Sikandar Aftab, Sajjad Hussain, et al.
Journal of Materials Chemistry C (2023) Vol. 12, Iss. 4, pp. 1211-1232
Closed Access | Times Cited: 16

High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor
Xinrui Shu, Jianfeng Wu, Fan Zhong, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 18
Closed Access | Times Cited: 7

Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation
Yufan Kang, Yongfeng Pei, Dong He, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 7

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Requested Article:

Showing 1-25 of 96 citing articles:

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