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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Three-dimensional integration of two-dimensional field-effect transistors
Darsith Jayachandran, Rahul Pendurthi, Muhtasim Ul Karim Sadaf, et al.
Nature (2024) Vol. 625, Iss. 7994, pp. 276-281
Closed Access | Times Cited: 100

Showing 51-75 of 100 citing articles:

2D materials-based 3D integration for neuromorphic hardware
Seung Ju Kim, Hyeon-Ji Lee, Chul‐Ho Lee, et al.
npj 2D Materials and Applications (2024) Vol. 8, Iss. 1
Open Access | Times Cited: 3
Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges
Baoshan Tang, Maheswari Sivan, Jin Feng Leong, et al.
npj 2D Materials and Applications (2024) Vol. 8, Iss. 1
Open Access | Times Cited: 3
More-than-moore steep slope devices for higher frequency switching applications: a designer’s perspective
Joy Chowdhury, Angsuman Sarkar, Kamalakanta Mahapatra, et al.
Physica Scripta (2024) Vol. 99, Iss. 4, pp. 042001-042001
Open Access | Times Cited: 2
Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts
Junseong Bae, Hyeyoon Ryu, Dohee Kim, et al.
Advanced Materials (2024) Vol. 36, Iss. 26
Closed Access | Times Cited: 2
P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability
Jingye Xie, Jianbing Shi, Junchen Dong, et al.
SID Symposium Digest of Technical Papers (2024) Vol. 55, Iss. S1, pp. 661-663
Closed Access | Times Cited: 2
Atomistic simulations of the thinning process of tantalum/copper heterostructure in wafer containing through silicon via
Kezhong Xu, Yuqi Zhou, Yu Ziniu, et al.
Applied Surface Science (2024) Vol. 676, pp. 161026-161026
Closed Access | Times Cited: 2
Artificial hawk-eye camera for foveated, tetrachromatic, and dynamic vision
Wenhao Ran, Zhuoran Wang, Guozhen Shen
Journal of Semiconductors (2024) Vol. 45, Iss. 9, pp. 090401-090401
Closed Access | Times Cited: 2
Impact of Water Vapor on the 2D MoS2 Growth in Metal-Organic Chemical Vapor Deposition
Р. И. Романов, Ivan V. Zabrosaev, Anastasia Chouprik, et al.
Vacuum (2024) Vol. 230, pp. 113739-113739
Closed Access | Times Cited: 2
Dry Transfer of van der Waals Junctions of Two-Dimensional Materials onto Patterned Substrates Using Plasticized Poly(vinyl chloride)/Kamaboko-Shaped Polydimethylsiloxane
Momoko Onodera, Manabu Ataka, Yijin Zhang, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 45, pp. 62481-62488
Open Access | Times Cited: 2
Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics
Huihui Yu, Haoran Zeng, Yanzhe Zhang, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 2
Emerging 2D Materials Hardware for In-sensor Computing
Yufei Shi, Ngoc Thanh Duong, Kah‐Wee Ang
Nanoscale Horizons (2024)
Closed Access | Times Cited: 2
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications
Salvatore Ethan Panasci, Emanuela Schilirò, Fabrizio Roccaforte, et al.
Advanced Functional Materials (2024)
Open Access | Times Cited: 2
Thickness‐Dependent Heat Dissipation in CrOCl Heat‐Escaping Channel
Yu Yang, Yan Zhou, Gang Zhang, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 2
A 2D route to 3D computer chips
Tania Roy
Nature (2024) Vol. 625, Iss. 7994, pp. 249-250
Closed Access | Times Cited: 1
Multichannel Two-Dimensional MoS2 Nanosheet MOSFET for Future Technology Node
Akhilesh Rawat, Brajesh Rawat
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 6, pp. 3945-3951
Closed Access | Times Cited: 1
Femtosecond laser welding of sapphire-copper using a thin film titanium interlayer
Yu Han, Jia-Xuan Zhao, Lin‐Jie Zhang, et al.
Optics & Laser Technology (2024) Vol. 177, pp. 111063-111063
Closed Access | Times Cited: 1
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors
Byeongchan Kim, Seojoo Lee, Jin‐Hong Park
Nanoscale Horizons (2024) Vol. 9, Iss. 9, pp. 1417-1431
Closed Access | Times Cited: 1
High‐Yield Production of High‐κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation‐Assisted Etching Approach
Weida Hong, Jiejun Zhang, Daobing Zeng, et al.
Small (2024)
Open Access | Times Cited: 1
Reliability Improvement of 2-D WSe$_{\text{2}}$ FETs by Regulating Charge Trapping: An Ab Initio Demonstration
Yu Zhao, Tao Xiong, Yue‐Yang Liu, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 10, pp. 6410-6416
Closed Access | Times Cited: 1
A Novel Double-Sided Etching and Electroplating Fabrication Scheme for Coaxial Through-Silicon-Vias in 3-D Integration
Zhiming Chen, Xuyan Chen, Han Wang, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 10, pp. 6249-6253
Closed Access | Times Cited: 1
Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors
Peng Yang, Yudong Pang, Jiajia Zha, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 10, pp. 6417-6423
Closed Access | Times Cited: 1
Universal Synthesis of Core–Shell‐Structured Ordered Mesoporous Transition Metal Dichalcogenides/Metal Oxides Heterostructures with Active Edge Sites
Zhenliang Li, Yujian Rao, Zhehan Wang, et al.
Small Structures (2024)
Open Access | Times Cited: 1
Performance of Graphene Hall Devices Under Different Device Structures
Guo‐Hua Hu, Wenchao Luo, Hui Tang, et al.
(2024), pp. 47-50
Closed Access | Times Cited: 1
Modulating the fracture behavior of interface cracks via electric field gradient in flexoelectric solids
Mengkang Xu, Xinpeng Tian, Qian Deng, et al.
Engineering Fracture Mechanics (2024), pp. 110504-110504
Closed Access | Times Cited: 1
Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Dasari Venkatakrishnarao, Abhishek Mishra, Yaoju Tarn, et al.
ACS Nano (2024) Vol. 18, Iss. 39, pp. 26911-26919
Closed Access | Times Cited: 1

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