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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

IGZO-based floating-gate synaptic transistors for neuromorphic computing
Yongli He, Rui Liu, Shanshan Jiang, et al.
Journal of Physics D Applied Physics (2020) Vol. 53, Iss. 21, pp. 215106-215106
Closed Access | Times Cited: 60

Showing 26-50 of 60 citing articles:

75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system
Shuangshuang Shao, Suyun Wang, Min Li, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 21, pp. 7019-7029
Closed Access | Times Cited: 9
Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine
Eunpyo Park, Suyeon Jang, Gichang Noh, et al.
Nano Letters (2023) Vol. 23, Iss. 20, pp. 9626-9633
Closed Access | Times Cited: 9
Synaptic plasticity and associative learning in IGZO-based synaptic transistor
Junwon Jang, S. Park, Doohyung Kim, et al.
Sensors and Actuators A Physical (2024) Vol. 376, pp. 115641-115641
Closed Access | Times Cited: 3
Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter
Hsuan Chang, Chi‐Hsin Huang, Kenji Nomura
ACS Applied Electronic Materials (2021) Vol. 3, Iss. 11, pp. 4943-4949
Closed Access | Times Cited: 21
All-Solid-State Synaptic Transistors with Lithium-Ion-Based Electrolytes for Linear Weight Mapping and Update in Neuromorphic Computing Systems
Jimin Park, Hwiho Hwang, Min Song, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 40, pp. 47229-47237
Closed Access | Times Cited: 8
Assessment of trapping layer control in IGZO/Al2O3/Ga2O3 synaptic transistor for neuromorphic computing
Eun Seo Jo, You Seung Rim
Materials Today Physics (2023) Vol. 37, pp. 101194-101194
Open Access | Times Cited: 7
Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al₂O₃-Based Ion Conducting Electrolyte
Reetwik Bhadra, Ramesh Kumar, Amitesh Kumar
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2749-2754
Closed Access | Times Cited: 2
Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High-k Oxide Composite Dielectric
Yushan Li, Wei Cai, R. Tao, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19271-19282
Open Access | Times Cited: 2
Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V
Yang Ming Fu, Jiawei Zhang, Wensi Cai, et al.
IEEE Transactions on Electron Devices (2021) Vol. 68, Iss. 6, pp. 2736-2741
Open Access | Times Cited: 16
A Bias‐Dependent Weight Update Characteristics of Low Power Synaptic Pass‐Transistors with a Hf‐Doped ZnO Channel Layer
Danyoung Cha, Jeongseok Pi, Gyoungyeop Do, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 2
Light/electric modulated approach for logic functions and artificial synapse behaviors by flexible IGZO TFTs with low power consumption
Liqiang Guo, Guifa Zhang, Hui Han, et al.
Journal of Physics D Applied Physics (2021) Vol. 55, Iss. 19, pp. 195108-195108
Closed Access | Times Cited: 13
Perspective on oxide-based three-terminal artificial synapses in physical neural networks
Kuan‐Ting Chen, Jen‐Sue Chen
Applied Physics Letters (2022) Vol. 121, Iss. 19
Closed Access | Times Cited: 9
Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor
Dongyeon Kang, Wonjung Kim, Jun Tae Jang, et al.
IEEE Access (2023) Vol. 11, pp. 20196-20201
Open Access | Times Cited: 5
InGaZnO Synaptic Transistor Using Metal-Hydroxyl Traps at Back Channel for Weight Modulation
C. Zhang, Baofeng Yang, Dong Wang, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 9, pp. 4958-4962
Closed Access | Times Cited: 5
IGZO synaptic thin-film transistors with embedded AlO x charge-trapping layers
Yeojin Lee, Hyerin Jo, Kooktae Kim, et al.
Applied Physics Express (2022) Vol. 15, Iss. 6, pp. 061005-061005
Closed Access | Times Cited: 8
Synaptic metaplasticity emulation in a freestanding oxide-based neuromorphic transistor with dual in-plane gates
Shanshan Jiang, Yongli He, Rui Liu, et al.
Journal of Physics D Applied Physics (2021) Vol. 54, Iss. 18, pp. 185106-185106
Closed Access | Times Cited: 11
Construction and Application of a Neuromorphic Circuit With Excitatory and Inhibitory Post-Synaptic Conduction Channels Implemented Using Dual-Gate Thin-Film Transistors
Yushen Hu, T. Ho, Tengteng Lei, et al.
IEEE Transactions on Circuits and Systems I Regular Papers (2024) Vol. 71, Iss. 4, pp. 1582-1589
Closed Access | Times Cited: 1
IGZO charge trap flash device for reconfigurable logic functions
Eunpyo Park, Dong Yeon Woo, Gichang Noh, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 12
Open Access | Times Cited: 1
Flexible neuromorphic transistors for neuromorphic computing and perception application
Shuo Ke, Yixin Zhu, Chuanyu Fu, et al.
Deleted Journal (2024) Vol. 1, Iss. 1
Open Access | Times Cited: 1
Indium oxide nanomesh-based electrolyte-gated synaptic transistors
Wei Qin, Byung Ha Kang, Jong Bin An, et al.
Journal of Information Display (2021) Vol. 22, Iss. 3, pp. 179-185
Open Access | Times Cited: 10
Thin film transistors integrating CsPbBr3 quantum dots for optoelectronic memory application
Jiamin Wen, Hao Hu, Guohao Wen, et al.
Journal of Physics D Applied Physics (2020) Vol. 54, Iss. 11, pp. 114002-114002
Closed Access | Times Cited: 9
Optimization of post-annealing temperature for high-performance synaptic transistors based on In–Ga–Zn–O channel and trap layers
Junhyeong Park, Yuseong Jang, Soo‐Yeon Lee
AIP Advances (2023) Vol. 13, Iss. 12
Open Access | Times Cited: 3
Heterogeneous interface engineering enabling homogeneous metal halide perovskite nanowires for artificial synapses
Mei Huang, Shizhen Zhang, Peizhi Zhou, et al.
Materials Today Nano (2023) Vol. 25, pp. 100449-100449
Closed Access | Times Cited: 3
Emulating synaptic plasticity in ionic liquid-gated zinc tin oxide neuromorphic transistor
Manu Shaji, Frenson P. Jose, K.J. Saji, et al.
Journal of Materials Science Materials in Electronics (2022) Vol. 33, Iss. 25, pp. 19985-19997
Closed Access | Times Cited: 5
Violet-light stimulated synaptic and learning functions in a zinc–tin oxide photoelectric transistor for neuromorphic computation
Ting-Ruei Lin, Li‐Chung Shih, Po-Jen Cheng, et al.
RSC Advances (2020) Vol. 10, Iss. 70, pp. 42682-42687
Open Access | Times Cited: 7

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