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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure
Huynh V. Phuc, Nguyen N. Hieu, Bui D. Hoi, et al.
Physical Chemistry Chemical Physics (2018) Vol. 20, Iss. 26, pp. 17899-17908
Closed Access | Times Cited: 110

Showing 26-50 of 110 citing articles:

Theoretical Insights into Two-Dimensional IV–V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications
Xu Gao, Yanqing Shen, Yanyan Ma, et al.
Inorganic Chemistry (2019) Vol. 58, Iss. 18, pp. 12053-12068
Closed Access | Times Cited: 40
C2N/BlueP van der Waals hetero-structure: an efficient photocatalytic water splitting 2D material
Hao Zhou, Weishan Cai, Jianwei Li, et al.
Physical Chemistry Chemical Physics (2019) Vol. 22, Iss. 3, pp. 1485-1492
Closed Access | Times Cited: 39
Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures
Peng Lei, Yu Cui, Liping Sun, et al.
Nanoscale Horizons (2018) Vol. 4, Iss. 2, pp. 480-489
Closed Access | Times Cited: 38
Graphene/GeTe van der Waals heterostructure: Functional Schottky device with modulated Schottky barriers via external strain and electric field
Xu Gao, Yanqing Shen, Yanyan Ma, et al.
Computational Materials Science (2019) Vol. 170, pp. 109200-109200
Closed Access | Times Cited: 37
Tunable Contacts in Graphene/InSe van der Waals Heterostructures
Xuhui Yang, Baisheng Sa, Peng Lin, et al.
The Journal of Physical Chemistry C (2020) Vol. 124, Iss. 43, pp. 23699-23706
Closed Access | Times Cited: 37
Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation
Mohammad Ali Mohebpour, Sahar Izadi Vishkayi, Meysam Bagheri Tagani
Journal of Applied Physics (2020) Vol. 127, Iss. 1
Open Access | Times Cited: 37
Contact barriers modulation of graphene/β-Ga2O3 interface for high-performance Ga2O3 devices
Haidong Yuan, Jie Su, Rui Guo, et al.
Applied Surface Science (2020) Vol. 527, pp. 146740-146740
Closed Access | Times Cited: 33
Two-dimensional γ-GeSe/BlueP heterojunctions for efficient solar energy conversion applications
Hao Huang, J.S. Wang, Zhuqin Xiang, et al.
Surfaces and Interfaces (2025), pp. 106119-106119
Closed Access
First-principles investigation on electronic properties and band alignment of group III monochalcogenides
Chongdan Ren, Sake Wang, Hongyu Tian, et al.
Scientific Reports (2019) Vol. 9, Iss. 1
Open Access | Times Cited: 35
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
Xuefeng Lu, Lingxia Li, Xin Guo, et al.
Computational Materials Science (2021) Vol. 198, pp. 110677-110677
Closed Access | Times Cited: 26
Density Functional Theory Study of the Electronic and Optical Properties of SnSe2/MoSe2 Heterostructures under Strain and Electric Field: Implications for Optoelectronic Devices
Yiyu Feng, Hui Bai, Mengya An, et al.
ACS Applied Nano Materials (2023) Vol. 6, Iss. 17, pp. 15795-15806
Open Access | Times Cited: 9
Energy band engineering in GaS/InS and GaSe/InS van der Waals bilayers by interlayer stacking design and applied vertical electric field - An ab-initio theoretical calculation based approach
Naresh Bahadursha, Joshna Palepu, Aditya Tiwari, et al.
Materials Science in Semiconductor Processing (2024) Vol. 180, pp. 108538-108538
Closed Access | Times Cited: 3
Strain engineering on the electronic states of two-dimensional GaN/graphene heterostructure
Zhongxun Deng, Xianhui Wang
RSC Advances (2019) Vol. 9, Iss. 45, pp. 26024-26029
Open Access | Times Cited: 29
Theoretical investigation of optoelectronic and magnetic properties of Co-doped ZnS and (Al, Co) co-doped ZnS
Muhammad Sheraz Khan, Lijie Shi, Bingsuo Zou, et al.
Computational Materials Science (2019) Vol. 174, pp. 109491-109491
Closed Access | Times Cited: 27
Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures
Tuan V. Vu, Tan Phat Dao, M. Idrees, et al.
Physical Chemistry Chemical Physics (2020) Vol. 22, Iss. 15, pp. 7952-7961
Closed Access | Times Cited: 27
Tunable Schottky barrier in InTe/graphene van der Waals heterostructure
Hengheng Li, Zhongpo Zhou, Haiying Wang
Nanotechnology (2020) Vol. 31, Iss. 33, pp. 335201-335201
Closed Access | Times Cited: 25
Interface contact and modulated electronic properties by external vertical strains and electric fields in graphene/MoS2 heterostructure
Jiakuo Shi, Li Chen, Maoyou Yang, et al.
Current Applied Physics (2022) Vol. 39, pp. 331-338
Closed Access | Times Cited: 15
Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene
M. R. Ebrahimi, T. Vazifehshenas
Applied Surface Science (2023) Vol. 616, pp. 156489-156489
Open Access | Times Cited: 8
Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures
Zachariah Hennighausen, Christopher Lane, Abdelkrim Benabbas, et al.
ACS Applied Materials & Interfaces (2019) Vol. 11, Iss. 17, pp. 15913-15921
Open Access | Times Cited: 24
Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure
Khang D. Pham, Chuong Nguyen, Hường Thị Thu Phùng, et al.
Chemical Physics (2019) Vol. 521, pp. 92-99
Closed Access | Times Cited: 24
Modulation of electronic and optical properties of GaTe monolayer by biaxial strain and electric field
Vo T.T., Nguyen N. Hieu, Bui D. Hoi, et al.
Superlattices and Microstructures (2020) Vol. 140, pp. 106435-106435
Closed Access | Times Cited: 22
Modulating a 2D heterointerface with g-C3N4 mesh layers: a suitable hetero-layered architecture for high-power and long-life energy storage
Yunping Wu, Wei Wei, Tianyi Ding, et al.
Journal of Materials Chemistry A (2021) Vol. 9, Iss. 12, pp. 7791-7806
Closed Access | Times Cited: 19
Theoretical insights into tunable electronic and optical properties of Janus Al2SSe monolayer through strain and electric field
Le C. Nhan, Cuong Q. Nguyen, Nguyen Van Hieu, et al.
Optik (2021) Vol. 238, pp. 166761-166761
Closed Access | Times Cited: 18
A DFT study of GaSe/AlN(ZnO) two-dimensional vdW heterostructure practiced as an encouraging photocatalyst for water splitting
Koussai Lazaar, Mohamed Barhoumi, M. Saïd
Computational Materials Science (2021) Vol. 201, pp. 110912-110912
Closed Access | Times Cited: 18
Tunable electronic and optical properties of BAs/WTe2 heterostructure for theoretical photoelectric device design
Wentao Luo, Xing Wei, Jiaxin Wang, et al.
Journal of Physics Condensed Matter (2024) Vol. 36, Iss. 25, pp. 255501-255501
Closed Access | Times Cited: 2

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