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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors
Xiankun Zhang, Huihui Yu, Wenhui Tang, et al.
Advanced Materials (2022) Vol. 34, Iss. 34
Closed Access | Times Cited: 62

Showing 26-50 of 62 citing articles:

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts
Shubhrasish Mukherjee, Gautam Samanta, Md. Nur Hasan, et al.
npj 2D Materials and Applications (2024) Vol. 8, Iss. 1
Open Access | Times Cited: 4
Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering
Heng Zhang, Jialei Miao, Chengchun Zhang, et al.
Nano Letters (2025)
Closed Access
High-Quality P-type Contacts for Atomically Thin MoTe2 Transistors with High-Work-Function Semimetal TiS2 Electrodes
Boyuan Di, Xinlu Li, Xiaokun Wen, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2
Huan Wang, Xiaojie Liu, Hui Wang, et al.
Advanced Electronic Materials (2025)
Open Access
High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition
Chenglin Wang, Qianqian Wu, Qilei Xu, et al.
Applied Surface Science (2024) Vol. 655, pp. 159693-159693
Closed Access | Times Cited: 3
Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS2/WSe2 van der Waals Heterostructures
Zeng-Lin Cao, Lin Zhu, K.L. Yao
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19158-19166
Closed Access | Times Cited: 3
Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors
Gao Li, Xiankun Zhang, Huihui Yu, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 32, pp. 38603-38611
Closed Access | Times Cited: 8
Precisely Tailoring WSe2 Polarity via van der Waals Bismuth–Gold Modulated Contact
Lingan Kong, Hao Liu, Xiaowei Wang, et al.
Nano Letters (2024) Vol. 24, Iss. 35, pp. 10949-10956
Closed Access | Times Cited: 2
Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics
Huihui Yu, Haoran Zeng, Yanzhe Zhang, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 2
Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors
Ze Yang, Xingkun Peng, Jinyong Wang, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 2
A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication
Lenan Gao, Bangbang Yang, Junli Du, et al.
Nanoscale (2024) Vol. 16, Iss. 25, pp. 12228-12236
Closed Access | Times Cited: 2
Hydrogen‐Bonding Integrated Low‐Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts
Dexing Liu, Ziyi Liu, Xinyu Gao, et al.
Advanced Materials (2024) Vol. 36, Iss. 35
Closed Access | Times Cited: 2
High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor
Viet-Anh Ha, Feliciano Giustino
npj Computational Materials (2024) Vol. 10, Iss. 1
Open Access | Times Cited: 2
具有亚2-nm沟道长度的二维垂直p-n结二极管
Haoyun Wang, Xingyu Song, Dongyan Li, et al.
Science China Materials (2023) Vol. 66, Iss. 9, pp. 3637-3643
Open Access | Times Cited: 6
Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals
Rongjie Zhang, Yujie Sun, Wenjun Chen, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 23
Closed Access | Times Cited: 5
Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits
Li Gao, Zhangyi Chen, Chao Chen, et al.
Nano Research (2023) Vol. 16, Iss. 11, pp. 12471-12490
Closed Access | Times Cited: 5
Thickness-dependent carrier polarity of MoTe2 transistors with NiTe2 semimetal contacts
Boyuan Di, Xiaokun Wen, Wenyu Lei, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 19
Closed Access | Times Cited: 5
Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Jialei Miao, Xiaowei Zhang, Ye Tian, et al.
Nanomaterials (2022) Vol. 12, Iss. 21, pp. 3845-3845
Open Access | Times Cited: 8
Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors
Jiajia Zha, Handa Liu, Huide Wang, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 4
Closed Access | Times Cited: 4
Single-crystal growth of layered metallic materials of TiTe2 based on a polytelluride flux method
Xiaojing Feng, Zhiqi Li, Guangda Chen, et al.
CrystEngComm (2023) Vol. 25, Iss. 38, pp. 5399-5404
Closed Access | Times Cited: 4
Controlled synthesis of van der Waals CoS2 for improved p-type transistor contact
Yao Wang, Chaocheng Liu, Hengli Duan, et al.
Nanotechnology (2023) Vol. 35, Iss. 2, pp. 025601-025601
Closed Access | Times Cited: 4
Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors
Huanrong Liang, Yuhang Ma, Huaxin Yi, et al.
Materials (2023) Vol. 16, Iss. 23, pp. 7372-7372
Open Access | Times Cited: 4
Atomic‐Scale Distribution and Evolution of Strain in Pt Nanoparticles Grown on MoS2 Nanosheet
Yuchen Zhu, Zhitao Zhao, Yingying Xu, et al.
Small Methods (2024)
Closed Access | Times Cited: 1
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors
Byeongchan Kim, Seojoo Lee, Jin‐Hong Park
Nanoscale Horizons (2024) Vol. 9, Iss. 9, pp. 1417-1431
Closed Access | Times Cited: 1
sp2 to sp3 hybridization transformation in 2D metal-semiconductor contact interface suppresses tunneling barrier and Fermi level pinning simultaneously
Wenchao Shan, Anqi Shi, Zhuorong Zhong, et al.
Nano Research (2024) Vol. 17, Iss. 11, pp. 10227-10234
Closed Access | Times Cited: 1

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